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Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors
Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...
A vacuum channel transistor controls electrons at the cathode to suppress gate leakage, letting it work inside amplifiers and ...
TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...
For decades, the speed of transistors has been approaching its physical limit. Now, researchers have built a new type of ...
The 75th anniversary of the invention of the transistor sparked a lively panel discussion at IEDM, spurring debate about the future of CMOS, the role of III-V and 2D materials in future transistors, ...
IEEE Spectrum on MSN
Junctionless transistors show a new path to 3D chips
Roll-on nanoscale membranes make circuits that stretch across 3 layers of silicon ...
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