Most electronic components get worse as they shrink. Signals blur, heat climbs, and the line between a digital “one” and ...

A new kind of memory device may finally solve the problem of overheating and battery drain in electronics. By shrinking ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by researchers from Science Tokyo. The team fabricated nanoscale junctions directly on ...

The story of computing is one of progressively better, faster, and more efficient machines powered by incremental-yet-substantial improvements made to every piece of tech they contain. The ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...

TL;DR: KIOXIA's new UFS Ver. 4.1 embedded memory devices, featuring 8th generation BiCS FLASH with CBA technology, deliver up to 45% faster performance and 20% better power efficiency for mobile ...

A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic ...

Microsoft's cloud and software businesses get most of the attention these days, but it's worth paying attention to the ...

ransparent, flexible electronics made from biodegradable polymers disappear in water within three days. (Nanowerk News) The use of electronics in various forms is on the rise, from wearable devices ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices, ...