Gallium nitride-based LEDs and power transistors can be made on the same IC, according to scientists from Cornell University and the Polish Academy of Sciences. The trick is to used both sides of the ...
A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...
Cree, Inc. (Nasdaq: CREE) announces the sample release of two new GaN HEMT transistors, expanding the power range and addressable applications of the Cree product family. The CGH40006P is a 6-Watt GaN ...